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| 2SC5877S Transistors Power transistor (60V, 0.5A) 2SC5877S !Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2089S !External dimensions (Unit : mm) SPT 3.0 (15Min.) 4.0 2.0 3Min. 0.45 2.5 5.0 0.5 0.45 (1) Emitter (2) Collector (3) Base (1) (2) (3) Taping specifications Symbol : C5877S !Applications Small signal low frequency amplifier High speed switching !Structure NPN Silicon epitaxial planar transistor !Packaging specifications Package Type Taping TP 5000 Code Basic ordering unit (pieces) 2SC5877S !Absolute maximum ratings (Ta=25C) Parameter Symbol VCBO VCEO VEBO DC IC ICP PC Limits 60 60 6 0.5 1.0 300 150 -55 to 150 Unit V V V A A mW C C 1 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Pw=10ms Pulsed Tj Tstg 1/3 2SC5877S Transistors !Electrical characteristics (Ta=25C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCEO BVCBO BVEBO ICBO IEBO Min. 60 60 6 - - Typ. - - - - - Max. - - - 1.0 1.0 Unit V V V A A Condition IC=1mA IC=100A IE=100A VCB=40V VEB=4V IC=100mA IB=10mA VCE=2V IC=50mA VCE=10V IE= -100mA f=10MHz VCB=10V IE=0mA f=1MHz IC=500mA IB1=50mA IB2= -50mA VCC 25V Collector-emitter saturation voltage DC current gain VCE (sat) hFE - 120 1 150 300 390 mV - - 1 Transition frequency fT - 300 - MHz Corrector output capacitance Turn-on time Storage time Fall time Cob Ton Tstg Tf - - - - 5 70 130 80 - - - - pF ns ns ns 2 1 Non repetitive pulse 2 See Switching charactaristics measurement circuits !hFE RANK Q 120-270 R 180-390 !Electrical characteristic curves 10 1000 COLLECTOR CURRENT : IC (A) Tstg DC CURRENT GAIN : hFE SWITCHING TIME : (ns) Ta=25C VCC=25V IC / IB=10 / 1 1000 VCE=2V 1 100ms 10ms 1ms 500s DC 100 Ta=125C Ta=25C Ta= -40C 100 Tf Ton 0.1 10 0.01 0.1 Single non repetitive Pulsed 1 10 100 10 0.01 0.1 1 10 1 0.001 0.01 0.1 1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Safe Operating Area Fig.2 Switching Time Fig.3 DC Current Gain vs. Collector Current () 10 1000 Ta=25C COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 10 IC / IB=10 / 1 Ta=25C 100 VCE=5V VCE=3V VCE=2V COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) DC CURRENT GAIN : hFE 1 Ta=125C Ta=25C Ta= -40C 1 IC / IB=20 / 1 IC / IB=10 / 1 10 0.1 0.1 1 0.001 0.01 0.1 1 0.01 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Collector Current () Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current () Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current () 2/3 2SC5877S Transistors 10 1 1000 1 Ta=125C Ta=25C Ta= -40C TRANSITION FREQUENCY : fT (MHz) IC / IB=10 / 1 COLLECTOR CURRENT : IC (A) VCE=2V BASE EMITTER SATURATION VOLTAGE : VBE (sat) (V) Ta=25C VCE=10V 100 0.1 0.1 Ta=125C Ta=25C Ta= -40C 10 0.01 0.001 0.01 0.1 1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) Fig.7 Base-Emitter Saturation Voltage vs. Collecter Current Fig.8 Grounded Emitter Propagation Characteristics Fig.9 Transition Frequency 100 Ta=25C f=1MHz COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 10 1 0.1 1 10 100 BASE TO COLLECTOR VOLTAGE : VCB (V) Fig.10 Collector Output Capacitance !Switching characteristics measurement circuits RL=50 VIN IB1 IC VCC 25V IB2 PW PW 50 S Duty cycle 1% IB1 Base current waveform 90% Collector current waveform Ton IC 10% Tstg Tf IB2 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0 |
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